Vishay Siliconix SI4866DY-T1-GE3
- SI4866DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 12V 11A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4866DY-T1-GE3 データシート
- 8-SOIC (0.154\", 3.90mm Width)
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 1934
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number SI4866DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 12V 11A 8SO |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.6W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 11A (Ta) |
Rds On (Max) @ Id, Vgs 5.5mOhm @ 17A, 4.5V |
Vgs(th) (Max) @ Id 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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