Toshiba Semiconductor and Storage TK39A60W,S4VX
- TK39A60W,S4VX
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 38.8A TO220SIS
- Transistors - FETs, MOSFETs - Single
- TK39A60W,S4VX データシート
- TO-220-3 Full Pack
- Tube
-
Lead free / RoHS Compliant
- 3508
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number TK39A60W,S4VX |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 600V 38.8A TO220SIS |
Package Tube |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220SIS |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 50W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta) |
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V |
Vgs(th) (Max) @ Id 3.7V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack |
TK39A60W,S4VX 保証
• 迅速に対応する
• 保証された品質
• グローバルアクセス
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