Toshiba Semiconductor and Storage TK11P65W,RQ
- TK11P65W,RQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 11.1A DPAK
- Transistors - FETs, MOSFETs - Single
- TK11P65W,RQ データシート
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 2309
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number TK11P65W,RQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 650V 11.1A DPAK |
Package Cut Tape (CT) |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 100W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta) |
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
TK11P65W,RQ 保証
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• 保証された品質
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