Vishay Siliconix SQ4850EY-T1_GE3
- SQ4850EY-T1_GE3
- Vishay Siliconix
- MOSFET N-CH 60V 12A 8SO
- Transistors - FETs, MOSFETs - Single
- SQ4850EY-T1_GE3 データシート
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 8314
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number SQ4850EY-T1_GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 60V 12A 8SO |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101, TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 6.8W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 22mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
SQ4850EY-T1_GE3 保証
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