Vishay Siliconix SIE882DF-T1-GE3
- SIE882DF-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 25V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE882DF-T1-GE3 データシート
- 10-PolarPAK® (L)
- Tube
-
Lead free / RoHS Compliant
- 1757
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number SIE882DF-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 25V 60A 10POLARPAK |
Package Tube |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 10-PolarPAK® (L) |
Supplier Device Package 10-PolarPAK® (L) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 12.5 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 10-PolarPAK® (L) |
SIE882DF-T1-GE3 保証
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