Vishay Siliconix SIDR626DP-T1-GE3
- SIDR626DP-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 60V 42.8A/100A PPAK
- Transistors - FETs, MOSFETs - Single
- SIDR626DP-T1-GE3 データシート
- PowerPAK® SO-8
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3417
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number SIDR626DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 60V 42.8A/100A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 |
Supplier Device Package PowerPAK® SO-8DC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 6.25W (Ta), 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 42.8A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case PowerPAK® SO-8 |
SIDR626DP-T1-GE3 保証
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