STMicroelectronics SCT50N120
- SCT50N120
- STMicroelectronics
- SICFET N-CH 1200V 65A HIP247
- Transistors - FETs, MOSFETs - Single
- SCT50N120 データシート
- TO-247-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4259
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number SCT50N120 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description SICFET N-CH 1200V 65A HIP247 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package HiP247™ |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 318W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 65A (Tc) |
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V |
Vgs (Max) +25V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 20V |
Package_case TO-247-3 |
SCT50N120 保証
• 迅速に対応する
• 保証された品質
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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