Toshiba Semiconductor and Storage RN1106MFV,L3F(CT
- RN1106MFV,L3F(CT
- Toshiba Semiconductor and Storage
- TRANS PREBIAS NPN 50V 0.1A VESM
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- RN1106MFV,L3F(CT データシート
- SOT-723
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 16615
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number RN1106MFV,L3F(CT |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS PREBIAS NPN 50V 0.1A VESM |
Package Tape & Reel (TR) |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-723 |
Supplier Device Package VESM |
Power - Max 150 mW |
Transistor Type NPN - Pre-Biased |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA, 5V |
Frequency - Transition - |
Resistor - Base (R1) 4.7 kOhms |
Resistor - Emitter Base (R2) 47 kOhms |
Package_case SOT-723 |
RN1106MFV,L3F(CT 保証
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