Infineon Technologies IPD038N06N3GATMA1
- IPD038N06N3GATMA1
- Infineon Technologies
- MOSFET N-CH 60V 90A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD038N06N3GATMA1 データシート
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 1933
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number IPD038N06N3GATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 60V 90A TO252-3 |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package PG-TO252-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 188W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 90A (Tc) |
Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies
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