Infineon Technologies BSC017N04NS G
- BSC017N04NS G
- Infineon Technologies
- MOSFET N-CH 40V 100A TDSON-8
- Transistors - FETs, MOSFETs - Single
- BSC017N04NS G データシート
- 8-PowerTDFN
- 8-PowerTDFN
-
Lead free / RoHS Compliant
- 1953
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number BSC017N04NS G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 40V 100A TDSON-8 |
Package 8-PowerTDFN |
Series OptiMOS? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 40V |
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 4V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case 8-PowerTDFN |
BSC017N04NS G 保証
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Infineon Technologies
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