ON Semiconductor 2N7002ET1G
- 2N7002ET1G
- ON Semiconductor
- MOSFET N-CH 60V 260MA SOT23-3
- Transistors - FETs, MOSFETs - Single
- 2N7002ET1G データシート
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 1421
- 現品在庫/ライセンスディーラー/工場余剰在庫
- 1年間の品質保証 》
- クリックして料金を取得
Part Number 2N7002ET1G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 60V 260MA SOT23-3 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300mW (Tj) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) |
Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 26.7 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
2N7002ET1G 保証
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• 保証された品質
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